Semiconductor acceleration sensor device and method for manufacturing the same

ABSTRACT

Although a weight part of an acceleration sensor chip fixed on a die pad is coated with a gelatinous resin part of low elasticity, the weight part is easily displaced by an external acceleration. Thus, an acceleration can be detected with accuracy. Furthermore, long-term reliability equal to those of regular resin packages is ensured because those portions of an acceleration sensor device which are not used for acceleration sensing are sealed with a resin part.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor acceleration sensor deviceutilizing a resin sealed package and a method for manufacturing thedevice. More particularly, this invention relates to the deviceutilizing an MEMS (Micro Electro Mechanical Systems) or an MCP (MultiChip Package). The MCP is a package on which an MEMS and a semiconductorcircuit chip are mounted together.

2. Description of the Related Art

In recent years, with reduced sizes and thicknesses of electronicdevices, attention is focused on an MEMS technology, which enablesfabrication of sensors or electromechanical parts or the like in amicrometer size.

FIGS. 8A to 8C of attached drawings show cross-sectional views ofexamples of the constitution of semiconductor acceleration sensordevices utilizing a conventional MEMS package. FIG. 8A illustrates asingle-chip type device, FIG. 8B a multi-chip type (a stacked type)device, and FIG. 8C a multi-chip type (a transversely-mounted type)device.

Generally, a hollow ceramic package is used for packaging asemiconductor acceleration sensor device. For example, in thesingle-chip type device shown in FIG. 8A, an acceleration sensor chip 10is housed in a hollow ceramic package 20. The acceleration sensor chip10 is formed based on a semiconductor fabrication process. A weight part11 is formed through etching in the central area of the bulk portion ofa silicon chip. Four beam parts 12 are formed in a cross shape tosupport the weight part 11 on a surface of the chip. A space 13 isformed between the weight part 11 and surrounding silicon. When the chipis subjected to an acceleration, the beam parts 12 are deformed.Piezoelectric elements formed on the beam parts 12 (not shown in thefigure) detect stress, and thereby an acceleration is obtained(calculated). If the beam parts 12 are subject to a stress greater thanan allowable value, the beam parts 12 are damaged due to a strain beyonda breaking limit. Therefore, stoppers are provided respectively abovethe beam parts 12 on the upper surface side of the acceleration sensorchip 10 and below the weight part 11 on the lower surface side of theacceleration sensor chip 10 to restrain displacement within apredetermined range.

The acceleration sensor chip 10 is fixed on a ceramic header 21 of theceramic package 20. Wires 15, which are metal thin wires, connectelectrode pads of the acceleration sensor chip 10 and post sections ofthe ceramic header 21. A ceramic cap 22 of the ceramic package 20 isfixed on the ceramic header 21, and covers the acceleration sensor chip10.

The reason the hollow ceramic package 20 is used to package theacceleration sensor device is that the sensitivity and the repeatabilityof the device are increased when a space 23 within the ceramic cap 22 iskept under vacuum or filled with a gas so that the weight part 11 doesnot suffer from a drag when accelerated. When the space 13 is filledwith an oil or a gel, as long as viscoelasticity characteristics thereofare stable, a drag acts on the weight part 11 can be cancelled out bytuning the characteristics of the oil or the gel.

A semiconductor pressure sensor device disclosed in Japanese PatentKokai No. 10-170380 is known as an example of such a device as has aspace within a semiconductor pressure sensor chip filled with an oil ora gel. In this semiconductor pressure sensor device, a surface of asemiconductor pressure sensor chip is coated with an elastic resin sothat the semiconductor pressure sensor chip is protected fromcontaminants.

In the stacked type device shown in FIG. 8B, a semiconductor circuitchip 16 is fixed on a ceramic header 21. The semiconductor circuit chip16 performs signal-processing of detection results of stress detected bythe acceleration sensor chip 10 to generate a detection signal. Wires 17connect electrode pads of the semiconductor circuit chip 16 and the postsections of the ceramic header 21. On the semiconductor circuit chip 16is fixed the acceleration sensor chip 10. Wires 15 connect the electrodepads of the acceleration sensor chip 10 and the electrode pads of thesemiconductor circuit chip 16.

In the transversely-mounted type device shown in FIG. 8C, theacceleration sensor chip 10 and the semiconductor circuit chip 16 arefixed on the ceramic header 21. The acceleration sensor chip 10 and thesemiconductor circuit chip 16 are covered with the ceramic cap 22, andhermetically sealed.

The semiconductor acceleration sensor devices utilizing the conventionalceramic package 20 have problems (1) to (3) as follows:

(1) The manufacturing cost of the ceramic package 20 shown in FIGS. 8Ato 8C becomes high because of the expensive parts used in manufacture.Furthermore, the ceramic header 21 and the ceramic cap 22 need to behermetically sealed with low-melting-point glass or solder. The sealingrequires high-temperature processing at a temperature of 360° C. orhigher (400° C. or higher with respect to low-melting-point glass),which results in a change in the properties of the semiconductor circuitchip 16 which is packaged together with the acceleration sensor chip 10as shown in FIGS. 8B and 8C.

(2) As to an MCP, in the stacked type device shown in FIG. 8B, when theacceleration sensor chip 10 is bonded on the semiconductor circuit chip16 with organic material, the ceramic header 21 and the ceramic cap 22also need to be resin sealed (bonded) for convenience of manufacturingprocesses. This resin sealing causes a problem in moisture resistance ina long term service life test. On the other hand, in thetransversely-mounted type device shown in FIG. 8C, the package 20becomes too large to have satisfactory package density.

(3) To solve the above problems (1) and (2), it is possible to seal thechip(s) with a resin in stead of the ceramic package 20, utilizing thetechnique of Japanese Patent Kokai No. 10-170380. As shown in FIG. 8C, adevice disclosed in Japanese Patent Kokai No. 10-170380 mounts apressure sensor chip and a semiconductor circuit chip transversely on asubstrate. A resin package having an externally-exposed recess (i.e., achip mounting part) is molded with the whole of the semiconductorcircuit chip being resin sealed. The pressure sensor chip is fixed atthe recess and kept exposed to the outside to detect external stress. Inorder to protect the pressure sensor chip from external contaminants, asurface of the pressure sensor chip is coated with an elastic protectiveresin which does not interfere with pressure transmission.

However, even though the whole of the semiconductor circuit chip 16shown in FIG. 8C is resin sealed and the surface of the accelerationsensor chip 10 is coated with an elastic resin using the above techniqueof Japanese Patent Kokai No. 10-170380, there remains a problem ofmoisture resistance around the acceleration sensor chip 10. Thus, it isstill difficult to overcome the problems (1) and (2).

SUMMARY OF THE INVENTION

One object of the present invention is to provide a semiconductoracceleration sensor device which is low-cost and excellent for massproduction while maintaining long-term reliability, and also to providea method for manufacturing such a semiconductor acceleration sensordevice. The semiconductor acceleration sensor device is provided throughgiving low-cost resin packaging to an MEMS chip by filling the inside ofthe MEMS chip with a gel material and coating the MEMS chip with the gelmaterial.

According to a first aspect of the present invention, there is provideda semiconductor acceleration sensor device that has an accelerationsensor chip, an elastic first resin part, and a second resin part. Theacceleration sensor chip has a weight part, a support part, a pedestalpart, and a stress detecting element. The support part flexibly supportsthe weight part with one end thereof connected to the weight part. Thepedestal part surrounds the weight part with an opposite end of thesupport part connected thereto. The stress detecting element detects astress from deformation caused in the support part due to anacceleration. The first resin part coats the weight part and the supportpart. The second resin part seals the first resin part and theacceleration sensor chip.

Although the weight part of the acceleration sensor chip is coated withthe elastic first resin part, it is easily displaced by an externalacceleration. Therefore, an acceleration can be detected with accuracy.Furthermore, long-term reliability equal to those of regular resinpackages is ensured because those portions of the acceleration sensordevice which are not used for acceleration sensing are sealed with thesecond resin part. Thus, compared to conventional devices, a device oflower-cost and higher mass productivity can be expected.

A method of manufacturing this semiconductor acceleration sensor deviceincludes injecting the first resin part into the pedestal part to coatthe support part and the weight part with the first resin part, andsealing the first resin part and the acceleration sensor chip with thesecond resin part.

According to this method, a semiconductor acceleration device which isexcellent in long-term reliability can be mass-produced at a low costthrough relatively simple process.

The semiconductor acceleration sensor device may further include a lidpart attached to the acceleration sensor chip, a substrate having aconductive part extending outwardly from the second resin part, asemiconductor circuit chip electrically connected to the conductive partof the substrate and mounted on the substrate, and a bump provided onthe semiconductor circuit chip and electrically connected to theacceleration sensor chip. The acceleration sensor chip is mounted on thebump. The acceleration sensor chip may be connected to the semiconductorcircuit chip via the first resin part.

Reduction of a package size can be achieved by this semiconductoracceleration sensor device, since the acceleration sensor chip isarranged on the semiconductor circuit chip.

A method of manufacturing this semiconductor acceleration sensor deviceincludes fixing the semiconductor circuit chip on the substrate, andelectrically connecting the conductive part of the substrate to thesemiconductor circuit chip; electrically connecting the stress detectingelement to the bump by fixing the pedestal part on the bump provided onthe semiconductor circuit chip; filling a gap between the pedestal partand the semiconductor circuit chip with the first resin part byinjecting the first resin part into the pedestal part, and covering thesupport part and the weight part with the first resin part; and blocking(closing) the pedestal part with the lid part, and sealing the firstresin part, the acceleration sensor chip, the lid part, and portionsother than the conductive part of the substrate with the second resinpart.

According to this manufacturing method, a semiconductor accelerationsensor device excellent in long-term reliability can be mass-produced ata lower cost through simpler manufacturing process.

The semiconductor acceleration sensor device may include a die pad and athrough hole. The die pad has a first area and a second area, and alsohas an upper surface and a lower surface. The second area surrounds thefirst area. The pedestal part of the acceleration sensor chip is mountedon the second area. The through hole is formed from the upper surface ofthe first area of the die pad through the lower surface of the firstarea of the die pad.

A method of manufacturing this semiconductor acceleration sensor deviceincludes fixing the pedestal part on the second area of the uppersurface of the die pad; covering the support part and the weight partwith the first resin part by injecting the first resin part into thepedestal part via the through hole of the die pad; and sealing the firstresin part, the acceleration sensor chip, and the die pad with thesecond resin part.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1F show the structure of a QFN (Quad Flat Nonlead) packagetype semiconductor acceleration sensor device according to a firstembodiment of the present invention. Specifically, FIG. 1A is across-sectional view of the semiconductor acceleration sensor device.FIG. 1B is a perspective view of an acceleration sensor chip included inthe semiconductor acceleration sensor device. FIG. 1C is a perspectiveview of a cross-sectional view taken along the line 1C-1C in FIG. 1B.FIG. 1D is a bisected perspective view of a cross-sectional view takenalong the line 1D-1D in FIG. 1B. FIG. 1E is a plan view of thesemiconductor acceleration sensor device shown in FIG. 1B. FIG. 1F is across-sectional view taken along the line 1F-1F in FIG. 1E.

FIGS. 2A to 2D show a series of manufacturing steps according to asecond embodiment to fabricate the semiconductor acceleration sensordevice of FIG. 1.

FIGS. 3A to 3D show another series of manufacturing steps according to athird embodiment to fabricate the semiconductor acceleration sensordevice of FIG. 1.

FIG. 4 is a cross-sectional view of an SON package type semiconductoracceleration sensor device according to a fourth embodiment of thepresent invention.

FIG. 5 is a cross-sectional view of another SON package typesemiconductor acceleration sensor device according to a fifth embodimentof the present invention.

FIG. 6 is a cross-sectional view of an MCP type semiconductoracceleration sensor device according to a sixth embodiment of thepresent invention.

FIG. 7 is a cross-sectional view of another MCP type semiconductoracceleration sensor device according to a seventh embodiment of thepresent invention.

FIGS. 8A to 8C show cross-sectional views of semiconductor accelerationsensor devices utilizing a conventional MEMS package respectively.

DETAILED DESCRIPTION OF THE INVENTION

First Embodiment

Referring to FIGS. 1A to 1F, a QFN package type semiconductoracceleration sensor device according to a first embodiment of thepresent invention will be described.

The semiconductor acceleration sensor device 30 is mounted on a leadframe 40. The lead frame 40 has a die pad 41 which is a rectangularsupporting plate. In a first area of the die pad 41 which occupies thecentral portion of the die pad 41 is formed a first through hole 41 a.Four conductive parts (for example, post sections) 42 a of a pluralityof leads 42 are provided around the die pad 41. On the lower surface ofthe die pad 41 is fixed a lid part 43 to close the through hole 41 a. Ina second area of the die pad 41, which surrounds the first area whichoccupies the central portion of the upper surface of the die pad 41 isfixed an acceleration sensor chip 50 which detects externalacceleration.

The acceleration sensor chip 50 has a pedestal part (for example, asilicon chip or a semiconductor chip) 51. In the central area of thesilicon chip 51 is formed a weight part 52 through etching based on asemiconductor fabrication process. In order to support the weight part52, four support parts (for example, beam parts) 53 are formed on theupper surface of the silicon chip 51 in a cross shape. A space 54 isformed between the weight part 52 and surrounding silicon. The space 54communicates with second through holes 55 formed on the upper surface ofthe silicon chip 51. On the respective four beam parts 53 are providedstress detecting elements (for example, piezo elements) 56. When thebeam parts 53 are subjected to a stress due to an acceleration, theparts are deformed, and electric resistance of the piezo elements 56 ischanged. From this change of the electric resistance, the piezo elements56 detect the stress. These piezo elements 56 are electrically connectedto a plurality of electrode pads 57 provided on the upper surface of thesilicon chip 51. The electrode pads 57 are connected to the uppersurfaces of the post sections 42 a by wires 58. It should be noted thatthe post sections 42 a has the lower surfaces (first surfaces) and theupper surfaces (second surfaces).

The space 54 of the acceleration sensor chip 50 is filled with agelatinous first resin part 61. The beam parts 53 formed on the uppersurface of the acceleration sensor chip 50 are also coated with theresin part 61. The gelatinous first resin part 61 is, for example, asilicon resin, which is at first a viscous liquid and then turns into agelatinous resin by heating (roughly at 150° C.). (For example, theresin has an elastic modulus of approximately 1×10⁻² Mpa (=1×10⁻³kg/mm²) and a viscosity of approximately 2Pa·s.) The acceleration sensorchip 50, which is coated with the resin part 61, and connection pointsof the wires 58 are encapsulated in a thermosetting second resin part 62such as an epoxy resin, a silicon resin, or a phenolic resin.

If the acceleration sensor chip 50 receives an acceleration greater thanan allowable value, the beam parts 53 are destroyed due to a strainbeyond a breaking limit. Therefore, it is preferable that stoppers areprovided respectively above the beam parts 53 on the upper surface sideof the acceleration sensor chip 50 and below the weight part 52 on thelower surface side of the acceleration sensor chip 50 to restraindisplacement within a predetermined range. In the first embodiment, theupper surfaces of the beam parts 53 are coated with the resin part 62,which has turned into a solid state, with an intermediary of thegelatinous resin part 61 in between. Here, the resin part 62 serves as astopper. Likewise, under the weight part 52 is provided the first areaof the die pad 41, which also acts as a stopper. When the die pad 41does not function well as a stopper due to the shortness of the weightpart 52 in the vertical direction, a spacer having a through hole may bedisposed beforehand on the die pad 41 so that the spacer functions asthe stopper.

When the semiconductor acceleration sensor device receives anacceleration, the weight part 52 moves. Although the weight part 52 iscoated with the gelatinous resin part 61, the weight part 52 is easilydisplaced, because the gelatinous resin part 61 has low elasticity (Thatis, the resin has high elasticity in a solid state and low elasticity ina liquid state.) and has low flow resistance against a force appliedinstantaneously, such as acceleration. (The viscosity of the resin part61 has a great influence on a force applied at a low speed (e.g.,pressure).) Therefore, the beam parts 53 which support the weight part52 are deformed by the force of an external acceleration, and theelectric resistance of the piezo elements 56 is changed. A stress actingon the beam parts 53 is thereby detected. The detected stress issupplied from the electrode pads 57 to the post sections 42 a via thewires 58. The acceleration can be obtained accurately if therelationship between acceleration and displacement (stress) is storedbeforehand in a semiconductor circuit or other device connected to thelower surfaces of the post sections 42 a.

The first embodiment of the present invention has advantages (1) to (4)as follows:

(1) Although the weight part 52 and the beam parts 53 of theacceleration sensor chip 50 are coated with the gelatinous resin part 61of low elasticity, they are easily displaced by an accelerationexternally applied. Therefore, an acceleration can be detected withaccuracy. Furthermore, long-term reliability equal to those of a regularresin packages is ensured because those portions of the accelerationsensor device which are not used for acceleration sensing are sealedwith the resin part 62. Thus, compared to conventional accelerationsensor devices, a device of lower-cost and higher mass productivity canbe expected.

(2) An acceleration sensor device can have a simple structure, since theresin part 62 above the acceleration sensor chip 50 and the die pad 41below the acceleration sensor chip 50 restrain the vertical displacementof the weight part 52 and the beam parts 53, which eliminates the needfor separately providing stoppers to restrain the vertical displacement.When the die pad 41 does not function well as a stopper due to theshortness of the weight part 52, a spacer having a through hole may bedisposed beforehand on the die pad 41 so that the spacer functions asthe stopper.

(3) By so controlling the viscosity of the gelatinous resin part 61filling the space 54 that the resin part 61 will not leak into thethrough hole 41 a in the die pad 41, it is possible to eliminate theneed for providing the lid part 43. This can further simplify thestructure of an acceleration sensor device.

(4) Although FIG. 1 illustrates a QFN package type device, the firstembodiment of the present invention can be applied to resin packages ingeneral.

Second Embodiment

FIGS. 2A to 2D show a series of manufacturing steps to fabricate thesemiconductor acceleration sensor device 30 shown in FIG. 1.

The semiconductor acceleration sensor device 30 is manufactured, forexample through the following steps (1) to (4).

(1) Step of FIG. 2A

The acceleration sensor chip 50 of FIG. 1 is prepared in advance. Theacceleration sensor chip 50 is positioned on the die pad 41 of the leadframe 40. The die pad 41 is coupled to a plurality of other die pads 41via the leads 42. The lower surface of the acceleration sensor chip 50is die-bonded (fixed) on the upper surface of the die pad 41 with anadhesive or the like. When the die pad 41 does not function sufficientlyas a stopper due to shortness of the weight part 52, a spacer having athrough hole may be disposed beforehand on the die pad 41 so that thespacer serves as the stopper. After the electrode pads 57 on the uppersurface of the acceleration sensor chip 50 are bonded (connected) to therespective post sections 42 a of the lead frame 40 by the wires 58, thelead frame 40 is turned upside down as shown in FIG. 2A.

(2) Step of FIG. 2B

A needle 63 for resin injection is positioned over the through hole 41 aprovided in the center of the die pad 41. Then, from the needle 63 aviscous liquid resin (for example, such as a thermosetting silicon) 61 ais injected into the through hole 41 a. The resin 61 a injected into thethrough hole 41 a fills the space 54 of the acceleration sensor chip 50,and coats the beam parts 53 on the upper surface of the accelerationsensor chip 50 via the through holes 55.

(3) Step of FIG. 2C

After the space 54 of the acceleration sensor chip 50 is filled with theresin 61 a, and the beam parts 53 on the upper surface of theacceleration sensor chip 50 are coated with the resin 61 a, the lid part43 is fixed over the through hole 41 a in the die pad 41. The liquidresin 61 a is hardened into the gelatinous resin part 61 through heattreatment (for example, roughly at 150° C.).

(4) Step of FIG. 2D

The lead frame 40 is again turned upside down to be back into theinitial position. When the thickness of the resin part 61 covering thebeam parts 53 on the upper surface of the acceleration sensor chip 50 isnot enough, the liquid resin 61 a is supplied from the upper surface ofthe acceleration sensor chip 50 as necessary. The liquid resin 61 a ishardened into the gelatinous resin part 61 through heat treatment tocomplete formation of the coating on the beam part 53.

Subsequently, in the same manner as regular resin packages, theacceleration sensor chip 50 is encapsulated by the resin part 62 by sucha method as transfer molding, and lead processing such as cutting of theleads 42 and surface treatment such as plating of the post sections 42 aare performed. Accordingly, manufacture of the semiconductoracceleration sensor device 30 of FIG. 1 is completed.

The second embodiment of the present invention has advantages (1) to (3)as follows:

(1) The semiconductor acceleration sensor device 30, which is excellentin long-term reliability, can be mass-produced at a low cost throughrelatively simple process, since the acceleration sensor chip 50 issealed with the resin part 62 after the weight part 52 and the beamparts 53 of the acceleration sensor chip 50 are covered with thegelatinous resin part 61.

(2) By so controlling the viscosity of the gelatinous resin part 61filling the space 54 that the resin part 61 will not leak into thethrough hole 41 a in the die pad 41, it is possible to eliminate theneed for providing the lid part 43. This can further simplify themanufacturing process.

(3) Although a thermosetting silicon resin or the like is used as theviscous liquid resin 61 a, a non-thermosetting silicon resin or the likemay be employed. In this case, the non-thermosetting silicon resin isleft standing for a predetermined period of time to harden into agelatinous state instead of given heat treatment. A resin which isgelatinous from the start can also be employed as the resin 61 a. Inthis case, it becomes difficult to fully coat the beam parts 53 on theupper surface of the acceleration sensor chip 50 with the resin injectedvia the through holes 55 when filling the space 54 of the accelerationsensor chip 50 in the step shown in FIG. 2B. Therefore, it is necessaryto additionally supply the resin 61 a from the upper surface of theacceleration sensor chip 50 in the step shown in FIG. 2C.

Third Embodiment

FIGS. 3A to 3D show another series of manufacturing steps to fabricatethe semiconductor acceleration sensor device 30 shown in FIG. 1. Thismethod is similar to that of the second embodiment. The semiconductoracceleration sensor device 30 is manufactured, for example, through thefollowing steps (1) to (4).

(1) Step of FIG. 3A

In the same manner as shown in FIG. 2A, the acceleration sensor chip 50is die-bonded on the die pad 41 of the lead frame 40. After theelectrode pads 57 of the acceleration sensor chip 50 are bonded to thepost sections 42 a of the lead frame 40 by the wires 58, the lead frame40 is turned upside down as shown in FIG. 3A.

(2) Step of FIG. 3B

The needle 63 for resin injection is positioned over the through hole 41a provided in the center of the die pad 41. Then, from the needle 63 theviscous liquid resin (for example, such as a thermosetting siliconresin) 61 a is injected into the through hole 41 a by only enough amountto coat the upper surface of the acceleration sensor chip 50. The resin61 a injected into the through hole 41 a flows via the through holes 55of the acceleration sensor chip 50 to cover the beam parts 53 on theupper surface of the acceleration sensor chip 50. Then, the resin 61 acovering the beam part 53 is turned into a gelatinous state through heattreatment (for example, roughly at 150° C.).

(3) Step of FIG. 3C

Once again, the liquid resin 61 a is injected from the through hole 41 ain the die pad 41 to fill the space 54 of the acceleration sensor chip50. Subsequently, the lid part 43 is fixed over the through hole 41 a inthe die pad 41. The resin 61 a within the space 54 is turned into agelatinous state through heat treatment (for example, roughly at 150°C.). Thus, the weight part 52 and the beam parts 53 of the accelerationsensor chip 50 are coated with the gelatinous resin part 61.

(4) Step of FIG. 3D

After the lead frame 40 is turned upside down to be back into theinitial position, in the same manner as regular resin packages, theacceleration sensor chip 50 is encapsulated by the resin part 62 by sucha method as transfer molding, and lead processing such as cutting of theleads 42 and surface treatment such as plating of the post sections 42 aare performed. Accordingly, manufacture of the semiconductoracceleration sensor device 30 of FIG. 1 is completed.

The third embodiment of the present invention has advantages (1) and (2)as follows:

(1) Injection of the resin 61 a is performed in two steps. In a firststep, the beam parts 53 of the acceleration sensor chip 50 is coatedwith the gelatinous resin part 61. In a second step, the weight part 52is covered with the gelatinous resin part 61. Therefore, injection ofthe resin 61 a in the first step and in the second step can be performedcontinuously with the lead frame 40 turned upside down. Thus, formationof coating with the resin part 61 can be conducted with efficiency,

(2) By so controlling the viscosity of the gelatinous resin part 61filling the space 54 that the resin part 61 will not leak into thethrough hole 41 a in the die pad 41, it is possible to eliminate theneed for providing the lid part 43. This can further simplify themanufacturing process. This advantage is similar to that of the secondembodiment.

Fourth Embodiment

FIG. 4 is a cross-sectional view of an SON (Small Outline Nonlead)package type semiconductor acceleration sensor device according to afourth embodiment of the present invention. Structural elements commonto those of the first embodiment shown in FIG. 1 are designated by thesame or similar reference symbols.

A semiconductor acceleration sensor device 30A is mounted on a substrate(for example, a wiring board) 70. The wiring board 70 has a plurality ofpost sections 71 on the upper surface, and a plurality of conductiveparts 72 on the lower surface. The post sections 71 and the conductiveparts 72 are connected by through holes or the like which are not shownin the figure. On the post sections 71 of the wiring board 70 isflip-chip bonded an acceleration sensor chip 50 similar to that shown inFIG. 1. On a plurality of electrode pads 57 provided on the uppersurface of the acceleration sensor chip 50 are respectively formed bumps59, which are electrically connected to the electrode pads 57. Thesebumps 59 are bonded on the post sections 71 of the wiring board 70, thuselectrically and mechanically connecting the acceleration sensor chip 50to the wiring board 70.

The space 54 within the acceleration sensor chip 50 is filled with theresin part 61 such as a gelatinous silicon resin, and a gap between theupper surface of the acceleration sensor chip 50 and the upper surfaceof the wiring board 70 is also filled with the gelatinous resin part 61.On the lower surface of the acceleration sensor chip 50 is fixed a lidpart 44. The lid part 44 blocks the space 54. The acceleration sensorchip 50 is encapsulated in the thermosetting resin part 62 such as anepoxy resin, a silicon resin, or a phenolic resin.

In the fourth embodiment, the wiring board 70 functions as a lowerstopper against beam parts 53 on the upper surface of the accelerationsensor chip 50, and the lid part 44 serves as an upper stopper againstthe weight part 52 of acceleration sensor chip 50. When the lid part 44does not work well as a stopper due to the shortness of the weight part52 in the vertical direction, a protrusion may be formed by a drawingprocess or the like in the central portion of the lid part 44, so thatthe protrusion extends into the acceleration sensor chip 50.Alternatively, a spacer may be attached to the upper surface of the lidpart 44 (the surface which is fixed to the acceleration sensor chip 50)so that the spacer functions as the stopper.

The semiconductor acceleration sensor device 30A having theabove-described structure operates in almost the same manner as thedevice of the first embodiment. When the device receives an externalacceleration, the weight part 52 moves. Because of low elasticity of thegelatinous resin part 61 around the weight part 52, the weight part 52is easily displaced. The piezo elements 56 on the beam parts 53 detectthe displacement. Results detected by the piezo elements 56 aretransmitted to the post sections 71 of the wiring board 70 via theelectrode pads 57 and the bumps 59, and issued from the conductive parts72. The acceleration can be obtained accurately if the relationshipbetween acceleration and displacement (stress) is stored in advance in asemiconductor circuit or other device connected to the wiring board 70.

The semiconductor acceleration sensor device 30A of the fourthembodiment is manufactured, for example, through the following steps (a)to (c).

(a) First Step

The upper surface of the acceleration sensor chip 50, which is preparedbeforehand, is positioned over the post sections 71 provided on thewiring board 70. The bumps 59 formed on the upper surface of theacceleration sensor chip 50 are flip-chip bonded on the post sections 71of the wiring board 70.

(b) Second Step

A viscous liquid resin (for example, such as a thermosetting siliconresin) 61 a is injected into the space 54 of the acceleration sensorchip 50. The resin 61 a fills up the gap between the upper surface ofthe acceleration sensor chip 50 and the upper surface of the wiringboard 70 via the through holes 55 to coat the beam parts 53, and theresin 61 a also fills up the space 54. Subsequently, the lid part 44 isfixed on the lower surface of the acceleration sensor chip 50 to blockthe space 54. The liquid resin 61 a is hardened into the gelatinousresin part 61 through heat treatment (for example, roughly at 150° C.).

(c) Third Step

In the same manner as regular resin packages, the acceleration sensorchip 50 is encapsulated in the resin part 62 by such a method astransfer molding and manufacture of the semiconductor accelerationsensor device 30A of FIG. 4 is completed.

The fourth embodiment of the present invention has advantages (1) to (5)as follows:

(1) Similar to the first embodiment, although the weight part 52 of theacceleration sensor chip 50 is coated with the gelatinous resin part 61of low elasticity, it is easily displaced by an external acceleration.Therefore, an acceleration can be detected with accuracy. Furthermore,long-term reliability equal to those of regular resin packages isensured because those portions of the acceleration sensor device whichare not used for acceleration sensing are sealed with the resin part 62.

(2) An acceleration sensor device of simple structure can be obtained,since the lid part 44 on the acceleration sensor chip 50 and the wiringboard 70 below the acceleration sensor chip 50 restrain the verticaldisplacement of the weight part 52 and the beam parts 53, whicheliminates the need for separately providing stoppers to restrain thevertical displacement. When the lid part 44 does not function well as astopper due to the shortness of the weight part 52, a protrusion may beformed in the central portion of the lid part 44, so that the protrusionextends into the acceleration sensor chip 50. Alternatively, a spacermay be attached to the upper surface of the lid part 44 (the surfacewhich is fixed to the acceleration sensor chip 50) so that the spacerserves as the stopper.

(3) The semiconductor acceleration sensor device 30A is manufacturedthrough the following sequence; first, the acceleration sensor chip 50is flip-chip bonded on the wiring board 70; then, the space 54 withinthe acceleration sensor chip 50, and the gap between the upper surfaceof the acceleration sensor chip 50 and the upper surface of the wiringboard 70 are filled with the gelatinous resin part 61; after that, theacceleration sensor chip 50 is sealed with the resin part 62. Therefore,compared to the device of the first embodiment, package size can bereduced. Manufacturing process can also be further simplified. Thus, thesemiconductor acceleration sensor device 30A excellent in long-termreliability can be mass-produced at a lower cost.

(4) Alternatively, manufacturing steps similar to those of FIGS. 3B and3C may be employed to manufacture the semiconductor acceleration sensordevice 30A shown in FIG. 4. In that case, injection of the liquid resin61 a is performed in two steps. In a first step, the gap between theupper surface of the acceleration sensor chip 50 and the upper surfaceof the wiring board 70 is filled with the resin 61 a, and then the resin61 a is turned into the gelatinous resin part 61 through heat treatment.In a second step, the space 54 is filled with the liquid resin 61 a, andthe liquid resin 61 a is then turned into the gelatinous resin part 61through heat treatment.

(5) Although FIG. 4 illustrates an SON package type device, the fourthembodiment of the present invention can be applied to resin packages ingeneral.

Fifth Embodiment

FIG. 5 is a cross-sectional view of another SON package typesemiconductor acceleration sensor device 30B according to a fifthembodiment of the present invention. Structural elements common to thoseof the fourth embodiment shown in FIG. 4 are designated by the same orsimilar reference symbols.

The semiconductor acceleration sensor device 30B does not need the lidpart 44, since the viscosity characteristics of the gelatinous resinpart 61 of FIG. 4 is controlled (i.e., the viscosity is changed). Thesemiconductor acceleration sensor device 30B is the same as thesemiconductor acceleration sensor device 30A of the fourth embodiment ofFIG. 4 except for the lid part 44.

The semiconductor acceleration sensor device 30B having theabove-described structure operates in almost the same manner as thesemiconductor acceleration sensor device of the fourth embodiment. Whenthe semiconductor acceleration sensor device is externally accelerated,the weight part 52 moves. Because of low elasticity of the gelatinousresin part 61 around the weight part 52, the weight part 52 is easilydisplaced. The piezo elements 56 on the beam parts 53 detect thedisplacement. When the weight part 52 is displaced toward the lowersurface of the acceleration sensor chip 50 (to the upward direction inFIG. 5) due to the acceleration, the solid-state resin part 62, workingas a stopper, prevents the acceleration sensor chip 50 from beingdamaged.

The semiconductor acceleration sensor device 30B of the fifth embodimentis manufactured, for example, through the following steps (a) to (c).

(a) First Step

The acceleration sensor chip 50 is positioned over the post sections 71on the wiring board 70. The bumps 59 formed on the upper surface of theacceleration sensor chip 50 are flip-chip bonded on the post sections 71of the wiring board 70.

(b) Second Step

The viscous liquid resin (for example, such as a thermosetting siliconresin having a relatively large viscosity) 61 a is injected into thespace 54 of the acceleration sensor chip 50. The resin 61 a fills up thegap between the upper surface of the acceleration sensor chip 50 and theupper surface of the wiring board 70 via the through hole 55 to coat thebeam parts 53, and the resin 61 a also fills up the space 54.Subsequently, the liquid resin 61 a is hardened into the gelatinousresin part 61 through heat treatment (for example, roughly at 150° C.).

(c) Third Step

In the same manner as regular resin packages, the acceleration sensorchip 50 is encapsulated in the resin part 62 by such a method astransfer molding. The manufacture of the semiconductor accelerationsensor device 30B of FIG. 5 is thus completed.

The fifth embodiment of the present invention has advantages (i) and(ii), in addition to almost the same advantages as (1), and (3) to (5)of the fourth embodiment:

(i) The viscosity characteristics of the gelatinous resin part 61 iscontrolled (i.e., the viscosity is changed) so that the resin part 61does not leak into an area surrounding the acceleration sensor chip 50,thereby eliminating the need for the lid part 44. This furthersimplifies the structure of the acceleration sensor device andmanufacturing process thereof compared to the fourth embodiment.Therefore, the semiconductor acceleration sensor device 30B can beprovided at a lower cost.

(ii) The resin part 62 above the acceleration sensor chip 50 and thewiring board 70 below the acceleration sensor chip 50 restrain thevertical displacement of the weight part 52 and the beam parts 53, whicheliminates the need for separately providing stoppers to restrain thevertical displacement. Thus, an acceleration sensor device can have asimpler structure.

Sixth Embodiment

FIG. 6 is a cross-sectional view of an MCP type semiconductoracceleration sensor device 30C according to a sixth embodiment of thepresent invention. Structural elements common to those of the fourthembodiment shown in FIG. 4 are denoted with the same or similar symbols.

The semiconductor acceleration sensor device 30C is an MCP type devicewhich has a semiconductor circuit chip 80, for example, within thesemiconductor acceleration sensor device 30A shown in FIG. 4. Thesemiconductor circuit chip 80 is stacked on the semiconductoracceleration sensor chip 50, and the acceleration sensor chip 50 and thesemiconductor circuit chip 80 are sealed with a resin. The semiconductorcircuit chip 80 performs signal-processing of stress detected by theacceleration sensor chip 50, and generates a detection signal.

The semiconductor circuit chip 80 is die-bonded on the upper surface ofthe wiring board 70. The wiring board 70 has the post sections 71 on theupper surface thereof and the conductive parts 72 on the lower surfacethereof. On a perimeter of the upper surface of the semiconductorcircuit chip 80 are provided a plurality of electrode pads 81. Insidethe electrode pads 81 are disposed a plurality of mounting pads 82. Theelectrode pads 81 are bonded to the post sections 71 of the wiring board70 by wires 83. On the mounting pads 82 is flip-chip bonded anacceleration sensor chip 50 similar to that of FIG. 4. On the electrodepads 57 provided on the upper surface of the acceleration sensor chip 50are formed the bumps 59. The bumps 59 are electrically connected to theelectrode pads 57. These bumps 59 are bonded on the mounting pads 82 ofthe semiconductor circuit chip 80, thus electrically and mechanicallyconnecting the acceleration sensor chip 50 to the semiconductor circuitchip 80.

The space 54 of the acceleration sensor chip 50 is filled with the resinpart 61 such as a gelatinous silicon resin. A gap between the uppersurface of the acceleration sensor chip 50 and the upper surface of thesemiconductor circuit chip 80 is also filled with the gelatinous resinpart 61. On the lower surface of the acceleration sensor chip 50 isfixed the lid part 44. The lid part 44 blocks the space 54. Theacceleration sensor chip 50 and the semiconductor circuit chip 80 areencapsulated in the thermosetting second resin part 62 such as an epoxyresin, a silicon resin, or a phenolic resin.

In the sixth embodiment, the upper surface of the semiconductor circuitchip 80 functions as a lower stopper against the beam parts 53 providedon the upper surface of the acceleration sensor chip 50, and the lidpart 44 serves as an upper stopper against the weight part 52 of theacceleration sensor chip 50. When the lid part 44 does not servesufficiently as a stopper due to the short vertical length of the weightpart 52, a protrusion may be formed by a drawing process or the like inthe central portion of the lid part 44, so that the protrusion extendsinto the acceleration sensor chip 50, or a spacer may be attached to theupper surface of the lid part 44 (the surface which is fixed to theacceleration sensor chip 50) so that the spacer serves as the stopper.

When the semiconductor acceleration sensor device 30C receives anacceleration, the weight part 52 moves. Because of low elasticity of thegelatinous resin part 61 around the weight part 52, the weight part 52is easily displaced. Piezo elements 56 on the beam parts 53 detect thedisplacement. Detected results are supplied to the mounting pads 82 onthe semiconductor circuit chip 80 via the electrode pads 57 and thebumps 59. In the semiconductor circuit chip 80 is stored in advance therelationship between acceleration and displacement (stress). Thesemiconductor circuit chip 80 processes the detected results to generatean acceleration detection signal. The acceleration detection signal istransmitted to the post sections 71 of the wiring board 70 via theelectrode pads 81 and the wires 83 and issued from the conductive parts72.

The semiconductor acceleration sensor device 30C of the sixth embodimentis manufactured, for example, through the following steps (a) to (d).

(a) First Step

The lower surface of the semiconductor circuit chip 80, which isprepared beforehand, is positioned and die-bonded on the wiring board70. The electrode pads 81 formed on the upper surface of thesemiconductor circuit chip 80 are bonded to the post sections 71 formedon the upper surface of the wiring board 70 by the wires 83.

(b) Second Step

The upper surface of the acceleration sensor chip 50, which is preparedbeforehand, is positioned over the mounting pads 82 formed on the uppersurface of the semiconductor circuit chip 80. The bumps 59 formed on theelectrode pads 57 on the upper surface of the acceleration sensor chip50 are flip-chip bonded on the mounting pads 82 on the semiconductorcircuit chip 80. It should be noted that the wire-bonding by the wires83 in the first step may be conducted after the bumps 59 are flip-chipbonded on the mounting pads 82.

(c) Third Step

The viscous liquid resin (for example, such as a thermosetting siliconresin) 61 a is injected into the space 54 of the acceleration sensorchip 50. The resin 61 a fills up the gap between the upper surface ofthe acceleration sensor chip 50 and the upper surface of thesemiconductor circuit chip 80 via the through hole 55 to coat the beamparts 53, and the resin 61 a also fills up the space 54. Subsequently,the lid part 44 is fixed on the lower surface of the acceleration sensorchip 50 to block the space 54. The liquid resin 61 a is hardened intothe gelatinous resin part 61 through heat treatment (for example,roughly at 150° C.).

(c) Fourth Step

In the same manner as regular resin packages, the acceleration sensorchip 50 and the semiconductor circuit chip 80 are encapsulated in theresin part 62 by such a method as transfer molding. The manufacture ofthe semiconductor acceleration sensor device 30C of FIG. 6 is thuscompleted.

The sixth embodiment of the present invention has advantages (i) and(ii), in addition to almost the same advantages as (1), (2) and (5) ofthe fourth embodiment:

(i) An MCP which includes the acceleration sensor chip 50 and thesemiconductor circuit chip 80 is manufactured through the followingsequence; first, the acceleration sensor chip 50 is flip-chip bonded onthe semiconductor circuit chip 80 which is fixed on the wiring board 70;then, the space 54 within the acceleration sensor chip 50, and the gapbetween the upper surface of the acceleration sensor chip 50 and theupper surface of the semiconductor circuit chip 80 are filled with thegelatinous resin part 61; after that, the acceleration sensor chip 50and the semiconductor circuit chip 80 are sealed with the resin part 62.Therefore, such an MPC can be provided at a low cost and in alow-temperature process.

(ii) Manufacturing steps similar to those of FIGS. 3B and 3C may beemployed to manufacture the acceleration sensor device 30C of FIG. 6. Inthat case, injection of the liquid resin 61 a is performed in two steps.In a first step, the gap between the upper surface of the accelerationsensor chip 50 and the upper surface of the semiconductor circuit chip80 is filled with the resin 61 a, and then the resin 61 a is turned intothe gelatinous resin part 61 through heat treatment. In a second step,the space 54 is filled with the liquid resin 61 a, and the liquid resin61 a is then turned into the gelatinous resin part 61 through heattreatment.

Seventh Embodiment

FIG. 7 is a cross-sectional view of an MCP type semiconductoracceleration sensor device 30D according to a seventh embodiment of thepresent invention. Structural elements common to those of the sixthembodiment shown in FIG. 6 are denoted by the same or similar symbols.

The semiconductor acceleration sensor device 30D does not have the lidpart 44, since the viscosity characteristics of the gelatinous resinpart 61 of FIG. 6 is controlled (i.e., the viscosity is changed). Thesemiconductor acceleration sensor device 30D is the same as thesemiconductor acceleration sensor device of the sixth embodiment of FIG.6 except for the lid part 44.

The semiconductor acceleration sensor device 30D having theabove-described structure operates in almost the same manner as thesemiconductor acceleration sensor device of the sixth embodiment. Whenthe semiconductor acceleration sensor device is externally accelerated,the weight part 52 moves. Because of low elasticity of the gelatinousresin part 61 around the weight part 52, the weight part 52 is easilydisplaced. The piezo elements 56 on the beam parts 53 detect thedisplacement. Based on the detected results, the semiconductor circuitchip 80 generates an acceleration detection signal. The accelerationdetection signal is transmitted to the post sections 71 of the wiringboard 70 and issued from the conductive parts 72. When the weight part52 is displaced toward the lower surface of the acceleration sensor chip50 (to the upward direction in the FIG. 7) due to the acceleration, thesolid-state resin part 62, serving as a stopper, prevents theacceleration sensor chip 50 from being damaged.

The semiconductor acceleration sensor device 30D of the seventhembodiment is manufactured, for example, through the following steps (a)to (d).

(a) First Step

The lower surface of the semiconductor circuit chip 80 is positioned anddie-bonded on the wiring board 70. The electrode pads 81 on the uppersurface of the semiconductor circuit chip 80 are bonded to the postsections 71 on the upper surface of the wiring board 70 by the wires 83.

(b) Second Step

The upper surface of the acceleration sensor chip 50 is positioned overthe mounting pads 82 formed on the upper surface of the semiconductorcircuit chip 80. The bumps 59 respectively formed on the electrode pads57 on the upper surface of the acceleration sensor chip 50 are flip-chipbonded on the mounting pads 82 on the semiconductor circuit chip 80. Itshould be noted that the wire-bonding by the wires 83 in the first stepmay be conducted after the bumps 59 are flip-chip bonded on the mountingpads 82.

(c) Third Step

The viscous liquid resin (for example, such as a thermosetting siliconresin) 61 a is injected into the space 54 of the acceleration sensorchip 50. The resin 61 a fills up the gap between the upper surface ofthe acceleration sensor chip 50 and the upper surface of thesemiconductor circuit chip 80 via the through hole 55 to coat the beamparts 53, and the resin 61 a also fills up the space 54. Subsequently,the liquid resin 61 a is hardened into the gelatinous resin part 61through heat treatment (for example, roughly at 150° C.).

(c) Fourth Step

In the same manner as regular resin packages, the acceleration sensorchip 50 and the semiconductor circuit chip 80 are encapsulated in theresin part 62 by such a method as transfer molding, and manufacture ofthe semiconductor acceleration sensor device 30D of FIG. 7 is completed.

The seventh embodiment of the present invention has advantages (I) and(II), in addition to the same advantages as (1), (2) and (5) of thefourth embodiment, and almost the same advantage as (i) of the sixthembodiment:

(I) The fifth embodiment of the present invention has advantages (i) and(ii), in addition to almost the same advantages as (1), and (3) to (5)of the fourth embodiment:

(i) The viscosity characteristics of the gelatinous resin part 61 iscontrolled (i.e., the viscosity is changed) so that the resin part 61does not leak into an area surrounding the acceleration sensor chip 50,thereby eliminating the need for the lid part 44. This furthersimplifies the structure of the acceleration sensor device andmanufacturing process thereof compared to the sixth embodiment.Therefore, the semiconductor acceleration sensor device 30B can beprovided at a lower cost.

(II) Manufacturing steps similar to those of FIGS. 3B and 3C may beemployed to manufacture the acceleration sensor device 30D of FIG. 7. Inthat case, injection of the liquid resin 61 a is performed in two steps.In a first step, the gap between the upper surface of the accelerationsensor chip 50 and the upper surface of the semiconductor circuit chip80 is filled with the resin 61 a, and then the resin 61 a is turned intothe gelatinous resin part 61 through heat treatment. In a second step,the space 54 is filled with the liquid resin 61 a, and the liquid resin61 a is then turned into the gelatinous resin part 61 through heattreatment.

Although the present invention has been described in connection with asemiconductor acceleration sensor device and a method for manufacturingthe device, it should be noted that the invention can also be applied tovarious semiconductor sensor devices on which a sensor chip other thanan acceleration sensor chip is mounted.

This application is based on Japanese Patent Application No. 2004-181596filed on Jun. 18, 2004, and the entire disclosure thereof isincorporated herein by reference.

1. A semiconductor acceleration sensor device comprising: anacceleration sensor chip that includes: a weight part, a support partwhich flexibly supports the weight part, one end of the support partbeing connected to the weight part, a pedestal part surrounding theweight part, an opposite end of the support part being connected to thepedestal part, and a stress detecting element which detects a stressfrom deformation caused in the support part due to an acceleration; anelastic first resin part to coat the weight part and the support part;and a second resin part to seal the first resin part and theacceleration sensor chip.
 2. The semiconductor acceleration sensordevice according to claim 1 further comprising: a die pad which has afirst area and a second area, and which also has an upper surface and alower surface, the second area surrounding the first area, the pedestalpart of the acceleration sensor chip being mounted on the second area;and a through hole which is formed from the upper surface of the firstarea of the die pad through the lower surface of the first area of thedie pad.
 3. The semiconductor acceleration sensor device according toclaim 2 further comprising a lid part which completely covers thethrough hole formed in the die pad and which is coated with the secondresin part.
 4. The semiconductor acceleration sensor device according toclaim 2 further comprising: a conductive part which has a first surfaceextending outwardly from the second resin part and which is disposed ona periphery of and spaced from the die pad; and a wire whichelectrically connects the stress detecting element and the conductivepart.
 5. The semiconductor acceleration sensor device according to claim1 further comprising: a lid part attached to the acceleration sensorchip; a substrate having a conductive part extending outwardly from thesecond resin part, the acceleration sensor chip being connected to thesubstrate via the first resin part; a bump provided on the substrate andelectrically connected to the acceleration sensor chip, the accelerationsensor chip being mounted on the bump.
 6. The semiconductor accelerationsensor device according to claim 1 further comprising: a lid partattached to the acceleration sensor chip; a substrate having aconductive part extending outwardly from the second resin part; asemiconductor circuit chip electrically connected to the conductive partof the substrate and mounted on the substrate, the acceleration sensorchip being connected to the semiconductor circuit chip via the firstresin part; a bump provided on the semiconductor circuit chip andelectrically connected to the acceleration sensor chip, the accelerationsensor chip being mounted on the bump.
 7. A method of manufacturing asemiconductor acceleration sensor device comprising: preparing anacceleration sensor chip that includes: a weight part, a support partwhich flexibly supports the weight part, one end of the support partbeing connected to the weight part, a pedestal part surrounding theweight part, an opposite end of the support part being connected to thepedestal part, and a stress detecting element which detects a stressfrom deformation caused in the support part due to an acceleration;injecting an elastic first resin part to coat the support part and theweight part; and sealing the first resin part and the accelerationsensor chip with a second resin part.
 8. The method of manufacturing asemiconductor acceleration sensor device according to claim 7 furthercomprising: preparing a die pad which has a first area and a secondarea, and which also has an upper surface and a lower surface, thesecond area surrounding the first area, the pedestal part of theacceleration sensor chip being mounted on the second area, the die padalso having a through hole which is formed from the upper surface of thefirst area of the die pad through the lower surface of the first area ofthe die pad; fixing the pedestal part on the second area of the die pad;covering the support part and the weight part with the first resin partby injecting the first resin part into the pedestal part via the throughhole of the die pad; and sealing the first resin part, the accelerationsensor chip, and the die pad with the second resin part.
 9. The methodof manufacturing a semiconductor acceleration sensor device according toclaim 8 further comprising: preparing a lid part which completely coversthe through hole formed in the die pad; and blocking the through holewith the lid part, and sealing the first resin part, the accelerationsensor chip, the die pad, and the lid part with the second resin part.10. The method of manufacturing a semiconductor acceleration sensordevice according to claim 8 further comprising: preparing a conductivepart having a first surface and disposed on a periphery of and spacedfrom the die pad; electrically connecting the conductive part and thestress detecting element of the acceleration sensor chip by a wire; andsealing the first resin part, the acceleration sensor chip, the die pad,the wire, and the conductive part with the second resin part so that thefirst surface of the conductive part is exposed.
 11. The method ofmanufacturing a semiconductor acceleration sensor device according toclaim 7 further comprising: preparing a substrate having a lid partattached to the acceleration sensor chip, a conductive part extendingoutwardly from the second resin part, and a bump provided on thesubstrate and electrically connected to the acceleration sensor chip;electrically connecting the stress detecting element to the bump byfixing the pedestal part on the bump provided on the substrate; fillinga gap between the pedestal part and the substrate with the first resinpart by injecting the first resin part into the pedestal part, andcovering the support part and the weight part with the first resin part;and blocking the pedestal part with the lid part, and sealing the firstresin part, the acceleration sensor chip, the lid part, and portionsother than the conductive part of the substrate with the second resinpart.
 12. The method of manufacturing a semiconductor accelerationsensor device according to claim 7 further comprising: preparing asubstrate having a lid part attached to the acceleration sensor chip,and a conductive part extending outwardly from the second resin part;preparing a semiconductor circuit chip electrically connected to theconductive part of the substrate and mounted on the substrate, thesemiconductor circuit chip having a bump provided thereon andelectrically connected to the acceleration sensor chip; fixing thesemiconductor circuit chip on the substrate, and electrically connectingthe conductive part of the substrate to the semiconductor circuit chip;electrically connecting the stress detecting element to the bump byfixing the pedestal part on the bump provided on the semiconductorcircuit chip; filling a gap between the pedestal part and thesemiconductor circuit chip with the first resin part by injecting thefirst resin part into the pedestal part, and covering the support partand the weight part with the first resin part; and blocking the pedestalpart with the lid part, and sealing the first resin part, theacceleration sensor chip, the lid part, and portions other than theconductive part of the substrate with the second resin part.
 13. Themethod of manufacturing a semiconductor acceleration sensor deviceaccording to claim 7, wherein the support part is coated with the firstresin part injected into the pedestal, and the weight part is coveredwith the first resin part additionally injected into the pedestal part.